www .cj-elec.com a-1,feb ,201 6 1 to- 252-2l 1. gate 2. drain 3. source jiangsu changjiang electronics technology co., ltd to-252-2l plastic-encapsulate mosfets cju 3 0n10 n-channel power mosfet description this advanced high voltage mosfet is designed to stand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a drain-to-source diode fast recovery time. desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. features ? high density cell design for ultra low r ds(on) ? fully characterized avalanche voltage and current ? good stability and uniformity with high e as ? special process technology for high esd capability ? excellent package for good heat dissipation applications ? hard switched and high frequency circuits ? uninterruptible power supply ? power switching application marking equivalent circuit maximum ratings ( t a =25 unless otherwise noted ) parameter symbol limit unit dra in-source voltage v ds 100 v gat e-source voltage v gs 20 v con tinuous drain current i d 3 0 a pul sed drain current i dm 12 0 a sin gle pulsed avalanche energy e as (1) 156 mj pow er dissipation p d 1.25 w the rmal resistance from junction to ambient r ja 100 /w junct ion temperature t j 150 sto rage temperature range t stg -55 ~+150 lea d temperature for soldering purposes(1/8 from case for 10s) t l 260 (1 ).e as condition: v dd =50v,l=0.5mh, r g =25?, starting t j = 25c v (br) dss r ds(on) max i d ? 100v 30a 31m @ 10v ? CJU30N10 = device co de solid dot = green molding compound device, xxx if none, the normal device =date code
www.cj-el ec.com 2 a-1,feb,2016 electric al characteristics(t a =25 unless otherwise specified) parameter symbol test condition min typ max unit off char acteristics drain-sou rce breakdown voltage v (br) dss v gs = 0v, i d =250a 100 v zero gat e voltage drain current i dss v ds =100v, v gs =0v 1 a gate-bod y leakage current i gss v ds =0v, v gs =20v 100 na on chara cteristics (note1) gate-thr eshold voltage v gs(th) v ds =v gs , i d =250a 1.3 2.1 2.5 v static d rain-source on-sate resistance r ds(on) v gs =10v, i d =15 a 24 31 m? forward transconductance g fs v ds = 5 v, i d = 10 a 15 s dynamic characteristics (note 2) input ca pacitance c iss 20 00 output ca pacitance c oss 30 0 reverse t ransfer capacitance c rss v ds = 25 v,v gs =0v, f =1mhz 250 pf switchin g characteristics (note 2) total ga te charge q g 39 gate-sour ce charge q gs 8 gate-dra in charge q gd v ds =5 0v, v gs =10v, i d =1 0a 12 nc turn-on delay time t d (on) 7 turn-on rise time t r 7 turn-off delay time t d(off) 29 turn-off fall time t f v dd =30v,v gs =10v,r g = 3.0 , i d =2a, r l =5 7 ns drain-so urce diode characteristics drain-sou rce diode forward voltage(note1) v sd v gs =0v, i s =15 a 1.2 v continuo us drain-source diode forward current i s 3 0 a pulsed dr ain-source diode forward current i sm 12 0 a notes: 1. pulse test : pulse width300s, duty cycle 2%. 2. guaranteed by design, not subject to production. mosfet electrical characteristics a t =25 unless otherwise specified
02468 0 10 20 30 40 50 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1 .0 1.2 1.4 0.1 1 10 345678910 0 10 20 30 40 50 60 70 80 90 100 5 1 01 52 02 53 0 0 10 20 30 40 50 012345 0 10 20 30 40 50 t a =100 v ds =5v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sf er c h aract eri stics t a =25 i d =250ua threshold volt a ge threshold voltage v th (v) junction temperature t j ( ) pulsed source current i s (a) source to drain voltage v sd (v) v sd i s t a =100 t a =25 30 pulsed i d =15a r ds(on) v gs on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed t a =25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) i d r ds(on) v gs =10v v gs = 7v,10v v gs = 4.5v v gs = 5v v gs = 3v output c h aracteristics drain current i d (a) drain to source voltage v ds (v) 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-ele c.com 3 a-1,feb,2016
min . ma x . min . ma x . a 2. 200 2. 380 0.087 0.094 a1 0.000 0.100 0.000 0.004 b 0.800 1.400 0.031 0.055 b 0.710 0.810 0.028 0.032 c 0.460 0.560 0.018 0.022 c1 0.460 0.560 0.018 0.022 d 6.500 6.700 0.256 0.264 d1 5.130 5.460 0.202 0.215 e 6.000 6.200 0.236 0.244 e e1 4.327 4.727 0.170 0.186 m n l 9.800 10.400 0.386 0.409 l1 l2 1.400 1.700 0.055 0.067 v - 0.190 ref. 1.778ref. 0.762ref. 0.070ref. 0.018ref. 4.830 ref. 2.9ref. 0.114ref. symbol dimensions in millimeters dimensions in inches 2.286 typ. 0.090 typ. www.cj-e l ec.com 4 a-1,feb,2016 to-252(4r)-2l package outline dimensions to-252(4r)-2l suggested pad layout
to-252(4r)-2l tape and reel www.cj-elec.com 5 a-1,feb,2016
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